2025-09-04
8月27-28日,由中國國際科(ke)技促進會鈣(gai)鈦(tai)礦(kuang)產(chan)業分會指導、光伏領跑(pao)者創新(xin)(xin)(xin)論壇(tan)主(zhu)辦的“第九屆鈣(gai)鈦(tai)礦(kuang)與(yu)疊(die)層電池(長三角(jiao))產(chan)業化論壇(tan)”在(zai)常州召開(kai)。來自科(ke)研(yan)機構(gou)、電池組件(jian)骨干企(qi)業、設(she)備材(cai)料廠商、投資機構(gou)及行業智庫代表(biao)出席會議。本次會議旨在(zai)探討鈣(gai)鈦(tai)礦(kuang)產(chan)業化進程(cheng)的核心技術(shu)與(yu)問題,助力(li)鈣(gai)鈦(tai)礦(kuang)光伏技術(shu)從實驗室(shi)到(dao)商業化的全鏈條突破。一道(dao)新(xin)(xin)(xin)能CTO宋登元博士(shi)受邀參會,并發(fa)表(biao)了(le)“鈣(gai)鈦(tai)礦(kuang)/TOPCon四(si)端疊(die)層技術(shu):光伏產(chan)業升級(ji)的必然方向(xiang)”的特邀講演,分享(xiang)了(le)一道(dao)新(xin)(xin)(xin)能在(zai)鈣(gai)鈦(tai)礦(kuang)/TOPCon四(si)端疊(die)層技術(shu)科(ke)研(yan)與(yu)產(chan)業化進展。
大會現場
鈣鈦礦/晶硅疊層電池發展挑戰
宋登元博士在報告中(zhong)(zhong)系(xi)統介(jie)紹了(le)鈣(gai)鈦(tai)(tai)礦/晶硅疊(die)層(ceng)電(dian)(dian)(dian)(dian)(dian)池(chi)的(de)分類(lei),深入分析(xi)了(le)兩端鈣(gai)鈦(tai)(tai)礦/晶硅疊(die)層(ceng)電(dian)(dian)(dian)(dian)(dian)池(chi)該類(lei)電(dian)(dian)(dian)(dian)(dian)池(chi)應(ying)用(yong)(yong)面臨的(de)挑戰,并重點闡(chan)述(shu)了(le)鈣(gai)鈦(tai)(tai)礦/硅四端疊(die)層(ceng)電(dian)(dian)(dian)(dian)(dian)池(chi)的(de)獨特(te)優(you)勢及一道新(xin)能的(de)研究進(jin)展。宋登元博士分析(xi)指(zhi)出,在兩端鈣(gai)鈦(tai)(tai)礦/硅疊(die)層(ceng)電(dian)(dian)(dian)(dian)(dian)池(chi)結(jie)構(gou)(gou)中(zhong)(zhong),由于(yu)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)需嚴格匹配(pei),理(li)想狀態(tai)下底電(dian)(dian)(dian)(dian)(dian)池(chi)與(yu)頂(ding)(ding)電(dian)(dian)(dian)(dian)(dian)池(chi)的(de)帶(dai)隙被限制在1.7-1.8eV范圍內,這使(shi)得該結(jie)構(gou)(gou)對光(guang)(guang)譜變(bian)化(hua)更為敏感。然而(er)在實(shi)際(ji)應(ying)用(yong)(yong)中(zhong)(zhong),多種(zhong)(zhong)因(yin)素會破壞(huai)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)適配(pei)性(xing)(xing),進(jin)而(er)會導(dao)(dao)致(zhi)(zhi)發電(dian)(dian)(dian)(dian)(dian)性(xing)(xing)能下降(jiang)。首先(xian)是光(guang)(guang)譜失配(pei),實(shi)際(ji)應(ying)用(yong)(yong)環境的(de)光(guang)(guang)譜與(yu)實(shi)驗室測(ce)試所用(yong)(yong)的(de)AM 1.5標(biao)準光(guang)(guang)譜存在顯著差(cha)異,這會直接導(dao)(dao)致(zhi)(zhi)頂(ding)(ding)電(dian)(dian)(dian)(dian)(dian)池(chi)與(yu)底電(dian)(dian)(dian)(dian)(dian)池(chi)的(de)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)輸(shu)(shu)出不一致(zhi)(zhi)。受(shou)“木(mu)桶效應(ying)”影(ying)響(xiang),串聯疊(die)層(ceng)電(dian)(dian)(dian)(dian)(dian)池(chi)的(de)整(zheng)體輸(shu)(shu)出電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)會隨之降(jiang)低(di)。其次是溫度系(xi)數(shu)失配(pei),晶硅電(dian)(dian)(dian)(dian)(dian)池(chi)與(yu)鈣(gai)鈦(tai)(tai)礦電(dian)(dian)(dian)(dian)(dian)池(chi)溫度系(xi)數(shu)差(cha)異較大,在實(shi)際(ji)應(ying)用(yong)(yong)這種(zhong)(zhong)差(cha)異同樣會造成兩種(zhong)(zhong)電(dian)(dian)(dian)(dian)(dian)池(chi)的(de)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)輸(shu)(shu)出不匹配(pei),進(jin)一步破壞(huai)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)失配(pei)性(xing)(xing)。在光(guang)(guang)伏(fu)光(guang)(guang)譜失配(pei)條件下由于(yu)遮擋導(dao)(dao)致(zhi)(zhi)疊(die)層(ceng)電(dian)(dian)(dian)(dian)(dian)池(chi)反(fan)向擊(ji)穿電(dian)(dian)(dian)(dian)(dian)壓會大幅(fu)降(jiang)低(di)、溫度系(xi)數(shu)失配(pei)導(dao)(dao)致(zhi)(zhi)疊(die)層(ceng)電(dian)(dian)(dian)(dian)(dian)池(chi)工作溫度上升(sheng)等。
宋登元博士講演
為什么說四端電池是發展方向?
宋登元博士(shi)進一步指出,相較于兩端鈣鈦(tai)礦/晶(jing)(jing)硅疊(die)層電(dian)(dian)(dian)(dian)池(chi)(chi)(chi),四端鈣鈦(tai)礦/晶(jing)(jing)硅疊(die)層電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)有更為明顯的(de)(de)(de)優勢,成為光(guang)(guang)伏產業(ye)升級的(de)(de)(de)必然方向。核心體現(xian)在以(yi)下方面(mian):一是結(jie)構(gou)與性(xing)(xing)(xing)能獨立性(xing)(xing)(xing),兩個子(zi)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)采用垂直堆疊(die)方式(shi),在光(guang)(guang)學層面(mian)實現(xian)耦合充分利用光(guang)(guang)譜(pu),而(er)電(dian)(dian)(dian)(dian)學層面(mian)相互獨立,每(mei)個子(zi)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)均擁有獨立輸出端,可(ke)針對各自特性(xing)(xing)(xing)單獨優化,大幅提升了(le)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)性(xing)(xing)(xing)能調節的(de)(de)(de)靈活(huo)性(xing)(xing)(xing)。二(er)是光(guang)(guang)譜(pu)適應性(xing)(xing)(xing)更強,頂部鈣鈦(tai)礦電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)帶隙(xi)(xi)選擇范圍較寬,在1.6-2eV寬帶隙(xi)(xi)范圍內可(ke)以(yi)實現(xian)高效率,降低(di)了(le)整個電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)系(xi)統對外部光(guang)(guang)譜(pu)變化的(de)(de)(de)敏感度(du),提升了(le)不(bu)同光(guang)(guang)照條件下的(de)(de)(de)穩(wen)定性(xing)(xing)(xing)。三(san)是技術復雜度(du)降低(di),無需滿足(zu)兩個子(zi)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)間(jian)的(de)(de)(de)電(dian)(dian)(dian)(dian)流匹配要求,同時省(sheng)去了(le)界(jie)面(mian)復合層的(de)(de)(de)設計(ji)與制備環節,簡化了(le)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)結(jie)構(gou)與制備工(gong)藝,有助于降低(di)成本(ben)并提升成品(pin)率。
四端鈣鈦礦/晶硅疊層電池優勢
一道新能鈣鈦礦/TOPCon四端疊層技術
作為(wei)(wei)N型技術(shu)(shu)(shu)的(de)引領(ling)者(zhe),一(yi)道(dao)新(xin)能(neng)(neng)以引領(ling)行業變革(ge)為(wei)(wei)使(shi)命,大(da)(da)力發(fa)(fa)展“一(yi)主(zhu)三(san)(san)翼”技術(shu)(shu)(shu)路線(xian)。由(you)于(yu)TOPCon相對HJT和(he)xBC技術(shu)(shu)(shu)有(you)更低(di)的(de)成本和(he)更高的(de)性價(jia)比,利用(yong)(yong)TOPCon為(wei)(wei)底(di)電(dian)(dian)池(chi)(chi),一(yi)道(dao)新(xin)能(neng)(neng)成功(gong)研發(fa)(fa)了(le)多款鈣鈦(tai)礦/TOPCon四(si)端疊(die)層組(zu)件(jian)。2024年底(di),一(yi)道(dao)新(xin)能(neng)(neng)聯合三(san)(san)峽集團科(ke)學技術(shu)(shu)(shu)研究院、纖納(na)光(guang)(guang)(guang)電(dian)(dian)共同研發(fa)(fa)的(de)用(yong)(yong)于(yu)鈣鈦(tai)礦/TOPCon四(si)端疊(die)層組(zu)件(jian)的(de)底(di)電(dian)(dian)池(chi)(chi)和(he)組(zu)件(jian)技術(shu)(shu)(shu)獲(huo)得(de)重大(da)(da)突(tu)破(po),搭載一(yi)道(dao)新(xin)能(neng)(neng)TOPCon底(di)電(dian)(dian)池(chi)(chi)與纖納(na)光(guang)(guang)(guang)電(dian)(dian)高效鈣鈦(tai)礦頂電(dian)(dian)池(chi)(chi)的(de)雙面(mian)鈣鈦(tai)礦/晶(jing)硅四(si)端疊(die)層組(zu)件(jian)形成批量出(chu)貨,開(kai)始(shi)應用(yong)(yong)于(yu)三(san)(san)峽能(neng)(neng)源50MW光(guang)(guang)(guang)伏先(xian)進技術(shu)(shu)(shu)發(fa)(fa)電(dian)(dian)示范基(ji)地,成為(wei)(wei)全(quan)國(guo)首(shou)個(ge)使(shi)用(yong)(yong)雙面(mian)TOPCon電(dian)(dian)池(chi)(chi)實現(xian)四(si)端鈣鈦(tai)礦/晶(jing)硅疊(die)層電(dian)(dian)池(chi)(chi)組(zu)件(jian)示范應用(yong)(yong)項目(mu)。該項技術(shu)(shu)(shu)榮獲(huo)“2024年全(quan)國(guo)發(fa)(fa)電(dian)(dian)設(she)備行業十大(da)(da)科(ke)技創新(xin)”典型案例,并入選2025年國(guo)家能(neng)(neng)源局第五(wu)批能(neng)(neng)源領(ling)域首(shou)臺(套(tao))重大(da)(da)技術(shu)(shu)(shu)裝備。
2025年6月(yue),一道(dao)新能(neng)在上海SNEC大(da)會上發布了26.8%效(xiao)率的(de)(de)2.82平米的(de)(de)TSiP2.0鈣鈦礦/TOPCon四端疊層(ceng)巨幕(mu)組件。該組件是一道(dao)新能(neng)與我(wo)國鈣鈦礦領域龍頭(tou)企業極電光(guang)(guang)能(neng)深(shen)度(du)合作的(de)(de)智慧結(jie)(jie)晶。正面創新性采用寬帶(dai)(dai)隙(xi)半透明大(da)面積鈣鈦礦沉積技(ji)術(shu),通過優化頂電池的(de)(de)功(gong)能(neng)層(ceng)、鈣鈦礦帶(dai)(dai)隙(xi)、界面鈍(dun)化工程(cheng),構建起300-800nm光(guang)(guang)譜高(gao)效(xiao)光(guang)(guang)電轉換(huan)體系。背面采用TOPCon 5.0電池,實現800-1200nm光(guang)(guang)譜高(gao)的(de)(de)量子效(xiao)率,成(cheng)功(gong)打破傳統單結(jie)(jie)電池的(de)(de)效(xiao)率天花板,推(tui)動疊層(ceng)電池技(ji)術(shu)邁向全新高(gao)度(du)。
TSiP2.0鈣鈦礦/TOPCon四端疊層(ceng)巨幕(mu)組件
未(wei)來,一道新(xin)能(neng)將持續深(shen)耕鈣(gai)鈦礦/TOPCon四端(duan)疊層電池的研(yan)發(fa)領域,不斷加大核心技術的研(yan)發(fa)投入力度,聚焦鈣(gai)鈦礦與TOPCon結合的四端(duan)疊層技術路(lu)線,全力推動(dong)(dong)該技術從實(shi)驗室成(cheng)果向(xiang)產業化(hua)落地(di)轉化(hua),通過(guo)技術突破(po)為光伏產業的持續迭代升級(ji)注入新(xin)動(dong)(dong)能(neng),助力全球光伏技術向(xiang)更高效率、更低成(cheng)本的方(fang)向(xiang)穩(wen)步邁進。